advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -20v 2.5v gate drive capability r ds(on) 150m fast switching characteristic i d -10a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 5.0 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice rohs-compliant product 1 ap3310gh/j-hf rating - 20 + 12 -10 0.01 continuous drain current, v gs @ 4.5v -6.2 pulsed drain current 1 -24 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 4.5v total power dissipation operating junction temperature range storage temperature range 25 -55 to 150 200902096 -55 to 150 linear derating factor thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 3 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s g d s to-252(h) g d s to-251(j) this device is suited for low voltage and battery power applications.
ap3310gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-2.8a - - 150 m ? v gs =-2.5v, i d =-2.0a - - 250 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - - v g fs forward transconductance v ds =-5v, i d =-2.8a - 4.4 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-16v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =-2.8a - 6 - nc q gs gate-source charge v ds =-6v - 1.5 - nc q gd gate-drain ("miller") charge v gs =-5v - 0.6 - nc t d(on) turn-on delay time 2 v ds =-6v - 25 - ns t r rise time i d =-1a - 60 - ns t d(off) turn-off delay time r g =6 , v gs =-5v - 70 - ns t f fall time r d =6 -60- ns c iss input capacitance v gs =0v - 300 - pf c oss output capacitance v ds =-6v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -10 a i sm pulsed source current ( body diode ) 1 - - -24 a v sd forward on voltage 2 t j =25 , i s =-10a, v gs =0v - - -1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board apec does not assume any liability arising out of the application or use of any product or circuit described
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 3 ap3310gh/j-hf 0 6 12 18 24 0.0 2.5 5.0 7.5 10.0 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -4.5v -4.0v -3.5v -3.0v -2.5v v gs = -2.0v 0 5 10 15 20 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -4.5v -4.0v -3.5v -3.0v -2.5v v gs = -2.0v 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2.8a v gs = -4.5v 0 200 400 600 800 0246810 -v gs (v) r ds(on) (m ) i d = -2.8a t c =25 o c
ap3310gh/j-hf fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 4 0 2 4 6 8 10 25 50 75 100 125 150 t c , case temperature ( o c) -i d , drain current (a) 0 5 10 15 20 25 30 0 50 100 150 t c , case temperature ( o c) p d (w) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 1 10 100 1 10 100 -v ds (v) -i d (a) t c =25 c single pulse 1ms 10ms 100ms d c
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 5 ap3310gh/j-hf 0 1 2 3 4 5 02468 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-2.8a v ds =-6v 10 100 1000 135791113 -v ds (v) c (pf) f =1.0mhz ciss coss crss 0 1 10 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd (v) -i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v)
ap3310gh/j-hf fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 6 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g q gs q gd q g charge 0.3 x rated v ds to the oscilloscope -5 v d g s v ds v gs r g r d 0.3 x rated v ds to the oscilloscope d g s v ds v gs i d i g -1~-3ma -5v
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